Slow cooling shall be adopted for silicon carbide cooling, and rapid cooling by cold air shall be avoided

Silicon carbide refractory board is widely used in high-grade sanitary ware, daily ceramics and electric porcelain kilns. The products have the advantages of high temperature resistance, thermal shock resistance, oxidation resistance and high strength. The products have uniform thickness, smooth surface and no slag during use. They can be processed into products of various sizes and specifications according to customer product requirements

Product features of silicon carbide manufacturers: small coefficient of thermal expansion, good thermal shock stability, long service life, no sudden fracture, no oxidation, no dirt and slag during use, and no pollution to ceramic products. Cordierite products can meet various firing needs of ceramic and magnetic materials below 1250 ℃

The storage place must be kept dry and away from moisture. The storage method should avoid plane stacking. It should be arranged vertically and neatly. When building fire-resistant plates, the fire-resistant columns should be vertical to the fire-resistant plates, and the multi-layer fire-resistant columns should be in a straight line. The design of firing curve should meet the conditions of normal operation. Slow cooling should be used during cooling to avoid rapid cooling by cold air. Handle carefully when going down the kiln, Avoid handling by hand at high temperatures

A nonmetallic carbide in which silicon and carbon are covalently bonded. The chemical formula is SiC. It is divided into synthetic silicon carbide and natural silicon carbide. Natural silicon carbide, known as carbon silica, mainly occurs in kimberlite and volcanic amphibolite, but its amount is very small and has no mining value.

Silicon carbide is a carbide accidentally discovered by e.g. Acheson, an American engineer, when electrofusing diamond in 1991. At that time, it was mistakenly thought to be a compound with corundum, which was named emery. In 1893, Acheson developed an industrial method for manufacturing silicon carbide. A resistance furnace with carbonaceous material as the furnace core was powered on to heat the mixture of SiO2 and carbon to react to produce silicon carbide (U.S. Patent No. 492767).

Industrial silicon carbide is artificial silicon carbide with SiC content of 95% ~ 99.5%. It often contains a small amount of free carbon and impurities such as Fe2O3, Si and SiO2. Silicon carbide can be divided into hexagonal system according to crystal type（ α- SiC) and cubic system（ β- Due to the different periodicity of its crystal arrangement, the hexagonal system has the crystal forms of hexagonal cells (2h, 4h, 6h... Etc.) and rhombic cells (15R, 21R, 27R... Etc.), and there are more than 100 kinds of homogeneous polycrystalline structures of silicon carbide. Industrial silicon carbide α- SiC and β- The mixture of SiC has two colors: black and green. Pure silicon carbide is colorless and transparent. It is black, green, blue and yellow when containing impurities. Hexagonal and cubic crystal systems, the crystal is plate-shaped and complex cubic columnar. It has glass luster, density of 3.17 ~ 3.47g/cm3, Mohs hardness of 9.2 and microhardness of 130380 ~ 33320mpa; Melting point: 2050 in atmosphere_ C begins to decompose and 2600C begins to decompose in reducing atmosphere; The elastic modulus is 466 and 480mpa; The tensile strength is 171.5mpa; The compressive strength is 1029mpa; The linear expansion coefficient is (25 ~ 1000C) 5.0 × 10-6／℃； The thermal conductivity (20ic) is 59W / (m • K). The chemical properties are stable. It is boiled in HCl, H2SO4 and HF without etching, but it begins to decompose at 230 ℃ in concentrated H3PO4.